(China (Mainland))
Product Summary
The 93C46CB1 is a 1K bit Electrically Erasable ProgrammableMemory (EEPROM) fabricated with High EnduranceSingle Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q).
Parametrics
93C46CB1 absolute maximum ratings: (1)TA, Ambient Operating Temperature: –40 to 125℃; (2)TSTG, Storage Temperature: –65 to 150℃; (3)TLEAD, Lead Temperature, Soldering: 215℃; (4)VIO, Input or Output Voltages (Q = VOH or Hi-Z) –0.3 to VCC +0.5 V; (5)VCC, Supply Voltage: –0.3 to 6.5 V; (6)VESD, Electrostatic Discharge Voltage: 2000V; (7)Electrostatic Discharge Voltage (Machine model): 500V.
Features
93C46CB1 features: (1)1 million erase/write cycles, with 40 years data retention; (2)dual organization: 64 x 16 or 128 x 8; (3)byte/wordand entire memory programming instructions; (4)self-timed programmingcycle with auto-erase; (5)ready/busy signal during programming; (6)single supply voltage; (7)sequential read operation; (8)5ms typical programming time; (9)enhanced esd/latch up performance for C version.
Diagrams
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 93C46A |
Other |
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Data Sheet |
Negotiable |
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93C46A/B/C |
Other |
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Data Sheet |
Negotiable |
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93C46A/W15K |
Microchip Technology |
EEPROM 1K, 128 X 8 SERIAL EE,IND, WAFER |
Data Sheet |
Negotiable |
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93C46A/WF15K |
Microchip Technology |
EEPROM 1K, 128 X 8 SERIAL EE, IND, WAFER ON FR |
Data Sheet |
Negotiable |
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93C46A-E/MS |
Microchip Technology |
EEPROM 128x8 |
Data Sheet |
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93C46A-E/P |
Microchip Technology |
EEPROM 128x8 |
Data Sheet |
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