(China (Mainland))
Product Summary
The AO4800 is a dual N-channel enhancement mode field effect transistor. It uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
Parametrics
AO4800 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ±12 V; (3)Continuous Drain Current TA=25℃ ID: 6.9A; TA=70℃ ID: 5.8A; (4)Pulsed Drain Current IDM: 40A; (5)Power Dissipation TA=25℃ PD: 2W; TA=70℃ PD: 1.44W; (6)Junction and Storage Temperature Range TJ TSTG: -55 to 150℃.
Features
AO4800 features: (1)VDS (V) = 30V; (2)ID = 6.9A; (3)RDS(ON) < 27mΩ (VGS = 10V); (4)RDS(ON) < 32mΩ (VGS = 4.5V); (5)RDS(ON) < 50mΩ (VGS = 2.5V).
Diagrams
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 AO4800 |
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Data Sheet |
Negotiable |
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AO4800B |
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MOSFET DUAL N-CH 30V 6.9A 8-SOIC |
Data Sheet |
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