(China (Mainland))
Product Summary
The C5411 is a toshiba transistor silicon NPN triple diffused MESA type.
Parametrics
C5411 absolute maximum ratings: (1)Collector.Base Voltage VCBO: 1500 V; (2)Collector.Emitter Voltage VCEO: 600 V; (3)Emitter.Base Voltage VEBO: 5 V; (4)DC IC: 14; (5)Collector Current: Pulse ICP 28A; (6)Base Current IB: 7 A; (7)Collector Power Dissipation PC: 60 W; (8)Junction Temperature Tj: 150 ℃; (9)Storage Temperature Range Tstg: -55~150 ℃.
Features
C5411 features: (1)High Voltage: VCBO = 1500 V; (2)Low Saturation Voltage: VCE (sat) = 3 V (Max.); (3)High Speed: tf = 0.15 μs (Typ.); (4)Collector Metal (Fin) is Fully Covered with Mold Resin.
Diagrams
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 C541U |
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Data Sheet |
Negotiable |
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