Product Summary

The D2012 is a Si NPN transistor.

Parametrics

D2012 absolute maximum ratings: (1)Collector-Base Voltage BVCBO: 60 V; (2)Collector-Emitter Voltage BVCEO: 50 V; (3)Emitter-Base Voltage BVEBO: 7 V; (4)Collector Dissipation Tcase=25℃: 30 W; Tamb=25℃ PCM: 1.5 W; (5)Collector Current DC ICM: 3 A; Pulse Icp: 7 A; (6)Base Current IB: 0.6 A; (7)Junction Temperature Tj: +150 ℃; (8)Storage Temperature Tstg: -55~+150 ℃.

Features

D2012 features: (1)Collector-Emitter voltage: BVCBO= 60V; (2)Collector current up to 3A; (3)High hFE linearity.

Diagrams

D2012 dimensions

D2010UK
D2010UK
Other

Data Sheet
Negotiable 
D2011UK
D2011UK
Other

Data Sheet
Negotiable 
D2015L
D2015L
Littelfuse
Rectifiers 200V 15A
Data Sheet
0-1: $0.65
1-10: $0.61
10-100: $0.58
100-250: $0.55
D2015L52
D2015L52
Littelfuse
Rectifiers 200V 15A
Data Sheet
Negotiable 
D2015L53
D2015L53
Littelfuse
Rectifiers 200V 15A
Data Sheet
0-1: $0.68
1-10: $0.67
10-100: $0.65
100-250: $0.64
D2017UK
D2017UK
Other

Data Sheet
Negotiable