(China (Mainland))
Product Summary
The FDS6990A is a dual N-channel logic level powertrench MOSFET. It is produced using advanced powerTrench process of Fairchild Semiconductor that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDS6990A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
FDS6990A absolute maxing ratings: (1)VDSS Drain-Source Voltage: 30V; (2)VGSS Gate-Source Voltage: ±20V; (3)ID Drain Current-Continuous: 7.5A, Pulsed: 20; (4)PD Power Dissipation for Single Operation: 1.6W, 1.0W, 0.9W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDS6990A features: (1)7.5A, 30V. RDS(ON)=18mΩ@VGS=10 V, RDS(ON)=23mΩ@VGS=4.5V; (2)Fast switching speed; (3)Low gate charge; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS6990A |
Fairchild Semiconductor |
MOSFET SO-8 DUAL N-CH 30V |
Data Sheet |
Negotiable |
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FDS6990A_D84Z |
Fairchild Semiconductor |
MOSFET S0-8 DUAL N-CH 30V |
Data Sheet |
Negotiable |
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FDS6990AS |
Fairchild Semiconductor |
MOSFET 30V DUAL N-CH. FET 18 MO SO8 |
Data Sheet |
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FDS6990A_Q |
Fairchild Semiconductor |
MOSFET SO-8 DUAL N-CH 30V |
Data Sheet |
Negotiable |
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