(China (Mainland))
Product Summary
The FDS8958A is a dual N- and P-Channel enhancement mode power field effect transistor. It uses the advanced PowerTrench process of Fairchild Semiconductor that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. The FDS8958A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
FDS8958A absolute maximim ratings: (1)VDSS Drain-Source Voltage: Q1=30V, Q2=30V; (2)VGSS Gate-Source Voltage: Q1=±20V, Q2=±20V; (3)ID Drain Current - Continuous: Q1=7A, Q2=-5A; - Pulsed: Q1=20A, Q2=-20A; (4)PD Power Dissipation for Dual Operation: 2 W; Power Dissipation for Single Operation: 1.6W/1W/0.9W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +150 ℃.
Features
FDS8958A features: (1)Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω@ VGS = 10V; RDS(on) = 0.040Ω@ VGS = 4.5V; (2)Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω@ VGS = -10V; RDS(on) = 0.080Ω@ VGS = -4.5V; (3)Fast switching speed; (4)High power and handling capability in a widely used surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FDS8958A |
Fairchild Semiconductor |
MOSFET SO8 COMP N-P-CH T/R |
Data Sheet |
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FDS8958A_F085 |
Fairchild Semiconductor |
MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET |
Data Sheet |
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FDS8958A_NF073 |
Fairchild Semiconductor |
MOSFET DUAL NCH AND PCH POWER TRENCH MOSFET |
Data Sheet |
Negotiable |
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FDS8958A_Q |
Fairchild Semiconductor |
MOSFET SO8 COMP N-P-CH T/R |
Data Sheet |
Negotiable |
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