Product Summary
The FGA25N120 is an IGBT. It provides low conduction and switching losses. The FGA25N120 offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
Parametrics
FGA25N120 absolute maximum ratings: (1)VCES, Collector-Emitter Voltage: 1200 V; (2)VGES, Gate-Emitter Voltage: ± 20 V; (3)IC, Collector Current @ TC = 25℃: 40 A; Collector Current @ TC = 100℃: 25 A; (4)ICM, Pulsed Collector Current: 75 A; (5)PD, Maximum Power Dissipation @ TC = 25℃: 310 W; Maximum Power Dissipation @ TC = 100℃: 125 W; (6)TJ, Operating Junction Temperature: -55 to +150℃; (7)Tstg, Storage Temperature Range: -55 to +150℃; (8)TL, Maximum Lead Temp. for soldering Purposes, 1/8 inch from case for 5 seconds: 300℃.
Features
FGA25N120 features: (1)High speed switching; (2)Low saturation voltage: VCE(sat) = 2.5 V @ IC = 25A; (3)High input impedance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FGA25N120AN |
Other |
Data Sheet |
Negotiable |
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FGA25N120AND |
Other |
Data Sheet |
Negotiable |
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FGA25N120ANTDTU |
Fairchild Semiconductor |
IGBT Transistors Copak Discrete |
Data Sheet |
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FGA25N120ANTDTU_F109 |
Fairchild Semiconductor |
IGBT Transistors Copak Discrete |
Data Sheet |
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FGA25N120ANDTU |
Fairchild Semiconductor |
IGBT Transistors Copak Discrete |
Data Sheet |
Negotiable |
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FGA25N120ANTD |
Other |
Data Sheet |
Negotiable |
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FGA25N120FTD |
Fairchild Semiconductor |
IGBT Transistors 1200V 25A Field Stop Trench |
Data Sheet |
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FGA25N120ANTU |
Fairchild Semiconductor |
IGBT Transistors 25A/1200V/NPT |
Data Sheet |
Negotiable |
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