QG82945GSE

Product Summary

The Mobile Intel QG82945GSE Express Chipset family adopts the Intel Centrino Duo Technology. The Intel QG82945GSE Express Chipset is designed for use in desktop designs. The Intel QG82945GSE Express Chipset is designed for use with the Intel Processor A100 and A110 in the Intel ultra mobile platform designs. The Mobile Intel QG82945GSE Express Chipset is designed for use with the Intel Atom Processor N270 in the Netbook Platform 2008 designs. The Mobile Intel QG82945GSE Express Chipsets come with the Generation 3.5 Intel Integrated Graphics Engine, and the Intel Graphics Media Accelerator 950 (Intel GMA 950), providing enhanced graphics support over the previous generation Graphics and Memory Controller Hubs ((G) MCH).

Parametrics

Absolute maximum ratings: (1)Die Temperature under Bias, Tdie: 0 to 105℃; (2)Storage Temperature, Tstorage: -55 to 150℃; (3)1.05-V Core Supply Voltage with Respect to VSS, VCC: -0.3 to 1.65V; (4)1.5-V Core Supply Voltage with Respect to VSS, VCC: -0.3 to 1.65V; (5)1.05-V AGTL+ buffer DC Input Voltage with Respect to VSS, VTT (FSB Vccp): -0.3 to 1.65V; (6)1.8-V DDR2 Supply Voltage with Respect to Vss, VCCSM: -0.3 to 1.90V; (7)1.5-V PCI-Express Supply Voltage with Respect to VSS, VCC3G: -0.3 to 1.65V; (8)2.5-V Analog Supply Voltage with Respect to VSSA3GBG, VCCA_3GBG: -0.3 to 2.65V; (9)2.5-V DAC Supply Voltage with Respect to VSSA_CRTDAC, VCCA_CRTDAC: -0.3 to 2.65V; (10)2.5-V CRT Sync Supply Voltage, VCC_SYNC: -0.3 to 2.65V; (11)3.3-V Supply Voltage with Respect to VSS, VCCHV: -0.3 to 3.65V.

Features

Features: (1)Intel Core Solo processor ULV; (2)Intel Celeron M processor (Intel Core processor based), Celeron M processor ULV; (3)533-MHz and 667-MHz front side bus (FSB) support; (4)Source synchronous double-pumped (2x) Address; (5)Source synchronous quad-pumped (4x) Data; (6)Supports single-/dual-channel DDR2 SDRAM; (7)Maximum Memory supported: up to 4 GB at 400, 533 and 667 MHz; (8)64-bit wide per channel; (9)Three Memory Channel Configurations supported; (10)One SO-DIMM connector per channel; (11)256-Mb, 512-Mb and 1-Gb memory technologies supported; (12)Support for x8 and x16 devices; (13)Support for DDR2 On-Die Termination (ODT); (14)Enhanced Addressing support (XOR and Swap); (15)Intel Rapid Memory Power Management (Intel RMPM); (16)Dynamic row power-down; (17)No support for Fast Chip Select mode; (18)Support for 2N timings only; (19)Supports Partial Writes to memory using Data Mask signals (DM).

Diagrams