Product Summary

The K9F2G08UOM is a 2G bit flash memory with spare 64M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller K9F2G08UOM automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The K9F2G08UOM is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Parametrics

K9F2G08UOM absolute maximum ratings: (1)Voltage on any pin relative to VSS, VIN/OUT: -0.6 to + 4.6V; VCC -0.6 to + 4.6V; (2)Temperature Under Bias, TBIAS: -10 to +125℃; (3)Storage Temperature, TSTG: -65 to +150℃; (4)Short Circuit Current, Ios: 5 mA.

Features

K9F2G08UOM features: (1)Voltage Supply: -2.7 V to 3.6 V; (2)Fast Write Cycle Time: Page Program time : 200μs(Typ.); Block Erase Time : 2ms(Typ.); (3)Command/Address/Data Multiplexed I/O Port; (4)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (5)Reliable CMOS Floating-Gate Technology: Endurance : 100K Program/Erase Cycles; Data Retention : 10 Years; (6)Command Register Operation; (7)Cache Program Operation for High Performance Program; (8)Power-On Auto-Read Operation; (9)Intelligent Copy-Back Operation; (10)Unique ID for Copyright Protection.

Diagrams

K9F2G08UOM block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
K9F2G08UOM-PCBO
K9F2G08UOM-PCBO
Other

Data Sheet
Negotiable 
K9F2G08UOM-YCB0
K9F2G08UOM-YCB0
Other

Data Sheet
Negotiable