Product Summary
The IRL3103S Advanced HEXFET Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRL3103S is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRL3103S absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 64 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 45 A; (3)Pulsed Drain Current: 220 A; (4)PD @TC = 25℃, Power Dissipation: 94 W; (5)Linear Derating Factor: 0.63 W/℃; (6)Gate-to-Source Voltage: ±16 V; (7)Avalanche Current: 34 A; (8)Repetitive Avalanche Energy: 22 mJ; (9)Peak Diode Recovery dv/dt: 5.0 V/ns; (10)Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ); (12)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).
Features
IRL3103S features: (1)Advanced Process Technology; (2)Surface Mount (IRL3103S); (3)Low-profile through-hole (IRL3103L); (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
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IRL3103S |
MOSFET N-CH 30V 64A D2PAK |
Data Sheet |
Negotiable |
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IRL3103SPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRL3103STRLPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRL3103STRRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRL3103STRL |
MOSFET N-CH 30V 64A D2PAK |
Data Sheet |
Negotiable |
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IRL3103STRR |
MOSFET N-CH 30V 64A D2PAK |
Data Sheet |
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